Prof. Jing Kong
Massachusetts Institute of Technology
H-index: 142
North America-United States
Description
Prof. Jing Kong, With an exceptional h-index of 142 and a recent h-index of 98 (since 2020), a distinguished researcher at Massachusetts Institute of Technology, specializes in the field of Low dimensional materials.
His recent articles reflect a diverse array of research interests and contributions to the field:
Van der Waals device integration beyond the limits of van der Waals forces using adhesive matrix transfer
Pressure-enhanced helimagnetic order in van der Waals multiferroic NiI2 in bulk and the 2D limit
Nanoscale Electrical Tuning of Charged Excitons in Two-Dimensional Materials with 1-nm Gate
Tailoring Light Emission and Scattering from Atomically Thin Materials with Transferable Nanostructures
2D materials for logic device scaling
Remote-contact catalysis for target-diameter semiconducting carbon nanotube array
Effects of pressure on the electronic and magnetic properties of bulk
Devices and methods for creating ohmic contacts using bismuth
Professor Information
University | Massachusetts Institute of Technology |
---|---|
Position | ___ |
Citations(all) | 97742 |
Citations(since 2020) | 37186 |
Cited By | 74173 |
hIndex(all) | 142 |
hIndex(since 2020) | 98 |
i10Index(all) | 400 |
i10Index(since 2020) | 327 |
University Profile Page | Massachusetts Institute of Technology |
Research & Interests List
Low dimensional materials
Top articles of Prof. Jing Kong
Van der Waals device integration beyond the limits of van der Waals forces using adhesive matrix transfer
Pristine van der Waals (vdW) heterostructures formed between two-dimensional (2D) and other materials can be used to create optical and electronic devices. However, the weak vdW forces alone do not allow direct physical stacking of arbitrary layers. As a result, vdW heterostructure fabrication typically requires solvents, sacrificial layers or high temperatures, which can introduce damage and contaminants. Here, we show that adhesive matrix transfer can eliminate these limitations and can provide vdW integration beyond the limits of vdW forces. In the approach, a hybrid high- and low-adhesion surface is used to decouple the forces driving the transfer from the vdW forces defining the heterostructure of interest. We show that the technique can be used to achieve direct vdW integration of diverse 2D materials (MoS2, WSe2, PtS2 and GaS) with dielectrics (SiO2 and Al2O3), which is conventionally forbidden but …
Authors
Peter F Satterthwaite,Weikun Zhu,Patricia Jastrzebska-Perfect,Melbourne Tang,Sarah O Spector,Hongze Gao,Hikari Kitadai,Ang-Yu Lu,Qishuo Tan,Shin-Yi Tang,Yu-Lun Chueh,Chia-Nung Kuo,Chin Shan Lue,Jing Kong,Xi Ling,Farnaz Niroui
Journal
Nature Electronics
Published Date
2024/1
Pressure-enhanced helimagnetic order in van der Waals multiferroic NiI2 in bulk and the 2D limit
G23. 00008: Pressure-enhanced helimagnetic order in van der Waals multiferroic NiI 2 in bulk and the 2D limit*
Authors
Luiz Gustavo Pimenta Martins,Connor Occhialini,Qian Song,Jesse Smith,Jesse Kapeghian,Danila Amoroso,Joshua J Sanchez,Paolo Barone,Bertrand Dupé,Matthieu Verstraete,Jing Kong,Antia Botana,Riccardo Comin
Journal
Bulletin of the American Physical Society
Published Date
2024/3/5
Nanoscale Electrical Tuning of Charged Excitons in Two-Dimensional Materials with 1-nm Gate
EE02. 00002: Nanoscale Electrical Tuning of Charged Excitons in Two-Dimensional Materials with 1-nm Gate*
Authors
Jawaher Almutlaq,Jiangtao Wang,Linsen Li,Chao Li,Tong Dang,Vladimir Bulović,Jing Kong,Dirk Englund
Journal
Bulletin of the American Physical Society
Published Date
2024/3/5
Tailoring Light Emission and Scattering from Atomically Thin Materials with Transferable Nanostructures
F12. 00008: Tailoring Light Emission and Scattering from Atomically Thin Materials with Transferable Nanostructures*
Authors
Ahmet Kemal Demir,Jiaruo Li,Tianyi Zhang,Connor Occhialini,Luiz Gustavo Pimenta Martins,Luca Nessi,Jing Kong,Riccardo Comin
Journal
Bulletin of the American Physical Society
Published Date
2024/3/5
2D materials for logic device scaling
Peng Wu, Tianyi Zhang, Jiadi Zhu, Tomás Palacios and Jing Kong discuss the reproducibility issues in the synthesis and device fabrication of two-dimensional transition metal dichalcogenides that need to be addressed to enable the lab-to-fab transition.
Authors
Peng Wu,Tianyi Zhang,Jiadi Zhu,Tomás Palacios,Jing Kong
Journal
Nature Materials
Published Date
2024/1/3
Remote-contact catalysis for target-diameter semiconducting carbon nanotube array
Electrostatic catalysis has been an exciting development in chemical synthesis (beyond enzymes catalysis) in recent years, boosting reaction rates and selectively producing certain reaction products. Most of the studies to date have been focused on using external electric field (EEF) to rearrange the charge distribution in small molecule reactions such as Diels-Alder addition, carbene reaction, etc. However, in order for these EEFs to be effective, a field on the order of 1 V/nm (10 MV/cm) is required, and the direction of the EEF has to be aligned with the reaction axis. Such a large and oriented EEF will be challenging for large-scale implementation, or materials growth with multiple reaction axis or steps. Here, we demonstrate that the energy band at the tip of an individual single-walled carbon nanotube (SWCNT) can be spontaneously shifted in a high-permittivity growth environment, with its other end in contact with a low-work function electrode (e.g., hafnium carbide or titanium carbide). By adjusting the Fermi level at a point where there is a substantial disparity in the density of states (DOS) between semiconducting (s-) and metallic (m-) SWCNTs, we achieve effective electrostatic catalysis for s-SWCNT growth assisted by a weak EEF perturbation (200V/cm). This approach enables the production of high-purity (99.92%) s-SWCNT horizontal arrays with narrow diameter distribution (0.95+-0.04 nm), targeting the requirement of advanced SWCNT-based electronics for future computing. These findings highlight the potential of electrostatic catalysis in precise materials growth, especially for s-SWCNTs, and pave the way for the development of …
Authors
Jiangtao Wang,Xudong Zheng,Gregory Pitner,Xiang Ji,Tianyi Zhang,Aijia Yao,Jiadi Zhu,Tomás Palacios,Lain-Jong Li,Han Wang,Jing Kong
Journal
arXiv preprint arXiv:2404.02981
Published Date
2024/4/3
Effects of pressure on the electronic and magnetic properties of bulk
Transition metal dihalides have recently garnered interest in the context of two-dimensional van der Waals magnets as their underlying geometrically frustrated triangular lattice leads to interesting competing exchange interactions. In particular, NiI 2 is a magnetic semiconductor that has been long known for its exotic helimagnetism in the bulk. Recent experiments have shown that the helimagnetic state survives down to the monolayer limit with a layer-dependent magnetic transition temperature that suggests a relevant role of the interlayer coupling. Here, we explore the effects of hydrostatic pressure as a means to enhance this interlayer exchange and ultimately tune the electronic and magnetic response of NiI 2. We study first the evolution of the structural parameters as a function of external pressure using first-principles calculations combined with x-ray diffraction measurements. We then examine the evolution of …
Authors
Jesse Kapeghian,Danila Amoroso,Connor A Occhialini,Luiz GP Martins,Qian Song,Jesse S Smith,Joshua J Sanchez,Jing Kong,Riccardo Comin,Paolo Barone,Bertrand Dupé,Matthieu J Verstraete,Antia S Botana
Journal
Physical Review B
Published Date
2024/1/3
Devices and methods for creating ohmic contacts using bismuth
Devices, such as transistors, that use bismuth to create ohmic contacts are provided, as are methods of manufacturing the same. The transistors, such as field-effect transistors, can include one or more two-dimensional materials, and electrical contact areas can be created on the two-dimensional material (s) using bismuth. The bismuth can help to provide energy-barrier free, ohmic contacts, and the resulting devices can have performance levels that rival or exceed state-of-the-art devices that utilize three-dimensional materials, like silicon. The two-dimensional materials can include transition metal dichalcogenides, such as molybdenum disulfide.
Published Date
2024/3/19
Professor FAQs
What is Prof. Jing Kong's h-index at Massachusetts Institute of Technology?
The h-index of Prof. Jing Kong has been 98 since 2020 and 142 in total.
What are Prof. Jing Kong's top articles?
The articles with the titles of
Van der Waals device integration beyond the limits of van der Waals forces using adhesive matrix transfer
Pressure-enhanced helimagnetic order in van der Waals multiferroic NiI2 in bulk and the 2D limit
Nanoscale Electrical Tuning of Charged Excitons in Two-Dimensional Materials with 1-nm Gate
Tailoring Light Emission and Scattering from Atomically Thin Materials with Transferable Nanostructures
2D materials for logic device scaling
Remote-contact catalysis for target-diameter semiconducting carbon nanotube array
Effects of pressure on the electronic and magnetic properties of bulk
Devices and methods for creating ohmic contacts using bismuth
...
are the top articles of Prof. Jing Kong at Massachusetts Institute of Technology.
What are Prof. Jing Kong's research interests?
The research interests of Prof. Jing Kong are: Low dimensional materials
What is Prof. Jing Kong's total number of citations?
Prof. Jing Kong has 97,742 citations in total.
What are the co-authors of Prof. Jing Kong?
The co-authors of Prof. Jing Kong are Hongjie Dai, Mildred S. Dresselhaus, Vladimir Bulovic, Cees Dekker, Pablo Jarillo-Herrero, Tomás Palacios.