Optical, Photo, and X‐Ray Luminescence Properties of Samarium Ions Doped with Borophosphate Glasses

physica status solidi (a)

Published On 2023/5

The optical, photo, and X‐ray luminescence properties of Sm3+ ion‐doped Li2O–Al2O3–Gd2O3–B2O3–P2O5 glasses are evaluated. The glasses are fabricated by the melt quenching technique. The absorption spectra exhibit the hypersensitive transitions 6H5/2→6P3/2 and 6H5/2→6F7/2 at the visible and near‐infrared range respectively. The glasses display four major transitions characteristic of Sm3+ ion for photoluminescence and X‐ray luminescence, with the most intense one corresponding to the 4G5/2→6H7/2 transition. The best emitting samarium concentration obtained by X‐ray excitation is compared to BGO crystals. The integral scintillation efficiency of glass is determined by total area under all of peak spectrum. The results indicate the promising application of these glasses in scintillators and for X‐ray sensing devices.

Journal

physica status solidi (a)

Published On

2023/5

Volume

220

Issue

10

Page

2200437

Authors

H.J. Kim

H.J. Kim

Kyungpook National University

Position

Professor of Physics

H-Index(all)

346

H-Index(since 2020)

170

I-10 Index(all)

0

I-10 Index(since 2020)

0

Citation(all)

0

Citation(since 2020)

0

Cited By

0

Research Interests

high energy physics

astro-particle physics

scintillator

University Profile Page

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Article Details
H.J. Kim

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Article Details
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physica status solidi (a)

Effect of Ultra‐Thin AlGaN Regrown Layer on the Electrical Properties of ZrO2/AlGaN/GaN Structures

Effects of the ultrathin 1 nm thick AlGaN regrown layer before gate insulator deposition on the performance of ZrO2/AlGaN/GaN metal‐insulator‐semiconductor (MIS) structures are investigated. In comparison with the reference ZrO2/AlGaN/GaN MIS high‐electron‐mobility transistors (MIS‐HEMTs), MIS‐HEMTs with AlGaN regrown layer exhibit increased maximum drain current (>1050 mA mm−1) and broader full‐width at half maximum (FWHM) of transconductance profile (11 V). Moreover, the gate leakage current in the forward direction is reduced by about four orders of magnitude while the hysteresis of the transfer curves is cut‐down to more than 40%. Compared with the control MIS‐capacitors (MIS‐caps), MIS‐caps with regrowth show highly evident sudden increase in capacitance known as “spill‐over” in the capacitance–voltage (C–V) profiles, suggesting improved ZrO2/AlGaN interfaces. Extracted …

Malte Selig

Malte Selig

Technische Universität Berlin

physica status solidi (a)

Dipolar coupling at interfaces of ultrathin semiconductors, semimetals, plasmonic nanoparticles, and molecules

Recent progress in growth techniques has enabled the fabrication of stacks of transition metal dichalcogenide monolayers combined with different nanostructures ranging from other 2D layers over dye molecules to even plasmonic nanoparticles. Such structures promise to combine the optoelectric properties of the constituents allowing to design structures with desired properties. For all of these examples, a detailed knowledge of the coupling among different constituents is crucial. In this article, a unified description is presented based on Maxwell Bloch equations to describe dipolar interactions among different types of heterostructures. Exemplary, Förster‐type energy transfer from dye molecules to MoS2 monolayers, strong coupling at MoSe2–metal nanoparticle interfaces, Meitner–Auger‐like interlayer coupling in WSe2–graphene stacks, and relaxation processes of hot interlayer excitons in MoSe2–WSe2 …

Kurt Busch

Kurt Busch

Humboldt-Universität zu Berlin

physica status solidi (a)

Binary Addressable Optical Multiplexing Waveguides via Electrochromic Switching

Photonic circuits attract much attention as promising candidates to overcome the drawbacks of their electronic counterparts. By utilizing the broad bandwidth and low energy consumption of optical communication, hybrid circuits can provide a comprehensive platform for the era beyond Moore's law. In particular, parallel matrix operations, the heavy lifting behind neural networks, remain challenging for traditional electronics due to high heat dissipation. To enable these parallel computations optically, (de‐)multiplexing is crucial to address the different channels. Previously this has been accomplished with complex spectral or time encodings in wave division or time division methods. However, herein, a simple method to address parallel optical channels exclusively with 2‐bit signals is presented. By using PEDOT:PSS as electrochromic material for intensity modulation, light transmission or absorption is controlled by …

Qiuyang Li

Qiuyang Li

Columbia University in the City of New York

physica status solidi (a)

Evidence for Hybrid Inorganic–Organic Transitions at the WS2/Terrylene Interface

The realization of the potential of hybrid inorganic organic systems requires an understanding of the coupling between the constituents: its nature and its strength. The observation of hybrid optical transitions in the monolayer WS2/terrylene hybrid is reported. The first‐principle calculations, linear optical, and transient absorption spectroscopy are employed to investigate the optical spectrum of the hybrid, which exhibits a new transition that does not appear in the constituents’ spectra. The calculations indicate type II level alignment, with the highest occupied level of terrylene in the gap of WS2. Exploiting state‐resolved transient absorption, the response of the hybrid interface to optical excitation is selectively probed. The dynamics reveal rapid hole transfer from WS2 to the terrylene layer, with a decay time of 88 ps. This hole transfer induces a bleach of the hybrid transition, which indicates that terrylene contributes to …

Akio Yamamoto

Akio Yamamoto

University of Fukui

physica status solidi (a)

Effect of Ultra‐Thin AlGaN Regrown Layer on the Electrical Properties of ZrO2/AlGaN/GaN Structures

Effects of the ultrathin 1 nm thick AlGaN regrown layer before gate insulator deposition on the performance of ZrO2/AlGaN/GaN metal‐insulator‐semiconductor (MIS) structures are investigated. In comparison with the reference ZrO2/AlGaN/GaN MIS high‐electron‐mobility transistors (MIS‐HEMTs), MIS‐HEMTs with AlGaN regrown layer exhibit increased maximum drain current (>1050 mA mm−1) and broader full‐width at half maximum (FWHM) of transconductance profile (11 V). Moreover, the gate leakage current in the forward direction is reduced by about four orders of magnitude while the hysteresis of the transfer curves is cut‐down to more than 40%. Compared with the control MIS‐capacitors (MIS‐caps), MIS‐caps with regrowth show highly evident sudden increase in capacitance known as “spill‐over” in the capacitance–voltage (C–V) profiles, suggesting improved ZrO2/AlGaN interfaces. Extracted …

Gaël Reecht

Gaël Reecht

Freie Universität Berlin

physica status solidi (a)

Variations of Vibronic States in Densely Packed Structures of Molecules with Intramolecular Dipoles

Electrostatic potentials strongly affect molecular energy levels and charge states, providing the fascinating opportunity of molecular gating. Their influence on molecular vibrations remains less explored. Here, we investigate ethyl‐diaminodicyanoquinone molecules on a monolayer of MoS2 on Au(111) using scanning tunneling and atomic force microscopy and spectroscopy. These molecules exhibit a large dipole moment in gas phase, which is found to (partially) persist on the MoS2 monolayer. The self‐assembled structures consist of chains, where the dipoles of neighboring molecules are aligned antiparallel. Thanks to the decoupling efficiency of the molecular states from the metal by the MoS2 interlayer, vibronic states of the molecules are resolved, which vary in intensity depending on the molecular surrounding. We suggest that the vibrations are strongly damped by electrostatic interactions with the …

John Bowers

John Bowers

University of California, Santa Barbara

physica status solidi (a)

Monolithic Passive− Active Integration of Epitaxially Grown Quantum Dot Lasers on Silicon

Cover image provided courtesy of Zeyu Zhang and John E. Bowers from Electrical and Computer Engineering Department, University of California Santa Barbara. The cover art showcases a novel photonic integration platform that monolithically integrates lasers on silicon photonic chip, presented initially in article 2100522.

Achim Walter Hassel

Achim Walter Hassel

Johannes Kepler Universität Linz

physica status solidi (a)

Anodic Niobium–Titanium Oxide Crossbar Memristor Arrays for pH Sensing in Liquids

Anodic Nb–Ti oxide crossbar memristor arrays are successfully produced on Si substrates. Their use as pH sensors is tested by analyzing their current–voltage (I–U) sweeps in Ringer´s solutions with different pH values. A gradual evolution of the memristive hysteretic curve is observed upon pH variation. A sensor calibration showing a linear trend with least square error close to 1 is performed and the performance of the pH sensing is assessed. The limit of detection (LOD), limit of quantification (LOQ), and the sensitivity (S) are determined. The calculated LOD is 0.4 pH, and the LOQ is 1.2 pH. The S is calculated as 0.5 pH corresponding to a concentration of c(OH−) = 3.5 mM. The reproducibility and repeatability of the measurements are calculated as 3.8% and 1.4%, respectively. An X‐ray photoelectron spectroscopy survey allows the study of the oxide composition providing information about its pH‐sensing …

daniel dodzi yao setsoafia

daniel dodzi yao setsoafia

Charles Darwin University

physica status solidi (a)

A Power Loss‐Based Modeling of Power Conversion Efficiency in Organic and Perovskite Solar Cells

This article presents a new mathematical model for simulating the power conversion efficiency (PCE) of organic solar cells (OSCs) and perovskite solar cells (PSCs). This model incorporates all power losses that can occur before the charge carriers are collected by their respective electrodes. This includes power loss due to thermalization of the charge carriers above the bandgap (PThermal$P_{\text{Thermal}}$), charge carrier recombination (Prec)$P_{\text{rec}} \left.\right)$, dissociation of excitons (PBI)$P_{\text{BI}} \left.\right)$, and the transport of free charge carriers to their respective electrodes through the energy off‐sets (PB)$P_{\text{B}} \left.\right)$. By quantifying each power loss, the model can simulate the net electrical power generated by a solar cell and estimate its PCE. The validity of the mathematical model is tested by comparing the calculated PCE of an OSC and a PSC with their experimental results …