John Bowers

Numerous modern technologies are reliant on the low-phase noise and exquisite timing stability of microwave signals. Substantial progress has been made in the field of microwave photonics, whereby low-noise microwave signals are generated by the down-conversion of ultrastable optical references using a frequency comb, –. Such systems, however, are constructed with bulk or fibre optics and are difficult to further reduce in size and power consumption. In this work we address this challenge by leveraging advances in integrated photonics to demonstrate low-noise microwave generation via two-point optical frequency division,. Narrow-linewidth self-injection-locked integrated lasers, are stabilized to a miniature Fabry–Pérot cavity, and the frequency gap between the lasers is divided with an efficient dark soliton frequency comb. The stabilized output of the microcomb is photodetected to produce a microwave …

The development of quantum photonic technologies will fuel a paradigm shift in data processing and communication protocols. A controlled generation of non-classical states of light is a challenging task at the heart of such technologies. Epitaxially grown self- assembled semiconductor quantum dots (QDs) offer the advantages of deterministic generation of single photons and prospects of device integration. By growing such QD structures only in designated locations on (001) Si substrate, the quantum properties of the emitted photons could be tuned with the built-in thermal stress for generating highly entangled photon pairs.

Cover image provided courtesy of Zeyu Zhang and John E. Bowers from Electrical and Computer Engineering Department, University of California Santa Barbara. The cover art showcases a novel photonic integration platform that monolithically integrates lasers on silicon photonic chip, presented initially in article 2100522.

The remarkable frequency stability of resonant systems in the optical domain (optical cavities and atomic transitions) can be harnessed at frequency scales accessible by electronics using optical frequency division. This capability is revolutionizing technologies spanning time keeping to high-performance electrical signal sources. A version of the technique called 2-point optical frequency division (2P-OFD) is proving advantageous for application to high-performance signal sources. In 2P-OFD, an optical cavity anchors two spectral endpoints defined by lines of a frequency comb. The comb need not be self-referenced, which greatly simplifies the system architecture and reduces power requirements. Here, a 2P-OFD microwave signal source is demonstrated with record-low phase noise using a microcomb. Key to this advance is a spectral endpoint defined by a frequency agile single-mode dispersive wave that is emitted by the microcomb soliton. Moreover, the system frequency reference is a compact all-solid-state optical cavity with a record Q-factor. The results advance integrable microcomb-based signal sources into the performance realm of much larger microwave sources.

Quantum dot lasers are expected to have excellent radiation hardness since carriers are spatially localized within the quantum dots and unable to move freely in-plane and interact with radiation-induced defects. Indeed, early experimental observations of reduced threshold current increase in quantum dot lasers with respect to quantum well lasers grown on native substrates were reported for heavy ion and proton environments. We recently observed the robustness of InAs quantum dot lasers grown on silicon and irradiated in neutron environments thus demonstrating radiation hardness also extends to quantum dot lasers grown on non-native substrates. We will discuss our experimental work and modeling effort to understand how the electronic structure of the quantum dot system impacts radiation hardness.

Ultralow-noise laser sources are crucial for a variety of applications, including microwave synthesizers, optical gyroscopes and the manipulation of quantum systems. Silicon photonics has emerged as a promising solution for high-coherence applications due to its ability to reduce the system size, weight, power consumption and cost. Semiconductor lasers based on self-injection locking have achieved fibre laser coherence, but typically require a high-quality-factor external cavity to suppress coherence collapse through frequency-selective feedback. Lasers based on external-cavity locking are a low-cost and turnkey operation option, but their coherence is generally inferior to self-injection locking lasers. In this work, we demonstrate quantum-dot lasers grown directly on Si that achieve self-injection-locking laser coherence under turnkey external-cavity locking. The high-performance quantum-dot laser offers a …

Silicon photonics has developed into a mainstream technology driven by advances in optical communications. The current generation has led to a proliferation of integrated photonic devices from thousands to millions-mainly in the form of communication transceivers for data centers. Products in many exciting applications, such as sensing and computing, are around the corner. What will it take to increase the proliferation of silicon photonics from millions to billions of units shipped? What will the next generation of silicon photonics look like? What are the common threads in the integration and fabrication bottlenecks that silicon photonic applications face, and which emerging technologies can solve them? This perspective article is an attempt to answer such questions. We chart the generational trends in silicon photonics technology, drawing parallels from the generational definitions of CMOS technology. We identify …

Thin-film lithium niobate (TFLN) is an attractive platform for photonic applications on account of its wide bandgap, its large electro-optic coefficient, and its large nonlinearity. Since these characteristics are used in systems that require a coherent light source, size, weight, power, and cost can be reduced and reliability enhanced by combining TFLN processing and heterogeneous laser fabrication. Here, we report the fabrication of laser devices on a TFLN wafer and also the coprocessing of five different GaAs-based III–V epitaxial structures, including InGaAs quantum wells and InAs quantum dots. Lasing is observed at wavelengths near 930, 1030, and 1180 nm, which, if frequency-doubled using TFLN, would produce blue, green, and orange visible light. A single-sided power over 25 mW is measured with an integrating sphere.

A parametric study was conducted on coupled-cavity on-chip lasers to investigate the feasibility of reducing the lasing linewidth. The study showed that the coupled-cavity structure achieved up to 7 orders of magnitude linewidth reduction. Increasing the number of QW/QD layers (or QD density-per-layer) resulted in higher optical power and narrower linewidths. However, in the QW case, increasing the layers reduced efficiency and increased the input-power requirement for locking, while in the QD case, increasing the QD layers/density increased the efficiency and decreased the input-power requirement. The study recommends minimizing the number of QW layers and maximizing the number of QD layers at moderate and low current injection, respectively.

Rapid progress in photonics has led to an explosion of integrated devices that promise to deliver the same performance as table-top technology at the nanoscale; heralding the next generation of optical communications, sensing and metrology, and quantum technologies. However, the challenge of co-integrating the multiple components of high-performance laser systems has left application of these nanoscale devices thwarted by bulky laser sources that are orders of magnitude larger than the devices themselves. Here we show that the two main ingredients for high-performance lasers -- noise reduction and isolation -- currently requiring serial combination of incompatible technologies, can be sourced simultaneously from a single, passive, CMOS-compatible nanophotonic device. To do this, we take advantage of both the long photon lifetime and the nonreciprocal Kerr nonlinearity of a high quality factor silicon nitride ring resonator to self-injection lock a semiconductor laser chip while also providing isolation. Additionally, we identify a previously unappreciated power regime limitation of current on-chip laser architectures which our system overcomes. Using our device, which we term a unified laser stabilizer, we demonstrate an on-chip integrated laser system with built-in isolation and noise reduction that operates with turnkey reliability. This approach departs from efforts to directly miniaturize and integrate traditional laser system components and serves to bridge the gap to fully integrated optical technologies.

Reliable quantum dot lasers on silicon are a key remaining challenge to successful integrated silicon photonics. In this work, quantum dot (QD) lasers on silicon with and without misfit dislocation trapping layers are aged for 12 000 hours and are compared to QD lasers on native GaAs aged for 8400 hours. The non-trapping-layer (TL) laser on silicon degrades heavily during this time, but much more modest gradual degradation is observed for the other two devices. Electroluminescence imaging reveals relatively uniform gradual dimming for the aged TL laser on silicon. At the same time, we find nanoscale dislocation loop defects throughout the quantum dot-based active region of all three aged lasers via electron microscopy. The Burgers vector of these loops is consistent with . We suggest that the primary source of degradation, however, is the generation and migration of point defects that substantially enhance …

Epitaxially grown quantum dot (QD) lasers in narrow pockets on patterned silicon photonics wafers present a key step toward full monolithic integration of on‐chip light sources. However, InAs QD lasers grown in deep and narrow pockets demonstrate limited performance and reliability compared to planar‐grown counterparts. Herein, InAs QD lasers are grown in patterned SiO2 pockets atop planar thermal cyclic annealed GaAs on (001) Si substrate with reduced threading dislocation density, enabling detailed study of how pocket geometry impacts device performance. Fabry–Pérot lasers with cleaved facets exhibit strong variation in performance based on the dimensions of the pocket, wherein thermal and optical metrics improve with increasing pocket width. Devices lase up to a maximum stage temperature of 115 °C with an extrapolated lifetime of 2.2 years at 80 °C for material grown in 50 μm by 3900 μm …

High-Q microresonators are indispensable components of photonic integrated circuits and offer several useful operational modes. However, these modes cannot be reconfigured after fabrication because they are fixed by the resonator’s physical geometry. In this work, we propose a Moiré speedup dispersion tuning method that enables a microresonator device to operate in any of three modes. Electrical tuning of Vernier coupled rings switches operating modality to Brillouin laser, bright microcomb, and dark microcomb operation on demand using the same hybrid-integrated device. Brillouin phase matching and microcomb operation across the telecom C-band is demonstrated. Likewise, by using a single-pump wavelength, the operating mode can be switched. As a result, one universal design can be applied across a range of applications. The device brings flexible mixed-mode operation to integrated photonic …

Optical nonreciprocity plays a key role in almost every optical system, directing light flow and protecting optical components from backscattered light. Controllable forms of on-chip nonreciprocity are needed for the robust operation of increasingly sophisticated photonic integrated circuits (PICs) in the context of classical and quantum computation, networking, communications, and sensing. However, it has been challenging to achieve wideband, low-loss optical nonreciprocity on-chip. In this paper, we demonstrate strong coupling and Rabi-like energy exchange between photonic bands, possessing a continuum of modes, to unlock nonreciprocity and frequency translation over wide optical bandwidths in silicon. Using a traveling-wave phonon field to drive indirect interband photonic transitions, we demonstrate band hybridization that enables an intriguing form of nonreciprocal dissipation engineering. Using the …

Replacing conventional electrical interconnects with optical counterparts at on-board and in-package length scales requires compact photonic integrated circuits (PICs) capable of scaling to aggregate capacities of 1Pbps with 0.1pJ/bit energy consumption at a range of ambient temperatures [1]. Photonic input-output can easily wavelength division multiplex (WDM) over enormous bandwidths without incurring any extra propagation loss; this allows staggering single line rates while using modest channel rates, which alleviates driver/receiver implementation. Silicon photonics is an attractive platform for this application due to its compact waveguide bends, its scalability and maturity, and its ability to serve as a substrate for other photonic materials that aid in the production of low-loss waveguides along with efficient photodetectors, modulators, and lasers [2]. Figure 25.1.1 illustrates the photonic architecture of a …

The fully epitaxial integration of IR laser sources into modern photonic circuits built on Si or SOI wafers is severely limited by the thermal- and lattice-constant mismatch between the substrate and the III-V layers that are required to achieve efficient solid-state lasing in the near infrared range. To overcome these limitations, modern commercially-available SiPh technologies employ selective wafer/device bonding techniques that allow to separately grow the III-V emitter and to integrate it into the photonic integrated circuit (PIC) at a later processing stage. Conversely, state-of-the-art devices leverage InAs quantum-dot (QD)-based active regions to highly reduce the sensitivity of the laser diode to the presence of the extended defects, which are generated as a consequence of the heteroepitaxial growth. In term of reliability, high levels of maturity have been demonstrated by both types of sources, either on the field or at …

Composite topological heterostructures, wherein topologically protected states are electronically tuned due to their proximity to other matter, are key avenues for exploring emergent physical phenomena. Particularly, pairing a topological material with a superconductor such as Pb is a promising means for generating a topological superconducting phase with exotic Majorana quasiparticles, but oft-neglected is the emergence of bulklike spin-polarized states that are quite relevant to applications. Using high-resolution photoemission spectroscopy and first-principles calculations, we report the emergence of bulk-like spin-polarized topological quantum well states with long coherence lengths in Pb films grown on the topological semimetal Sb. The results establish Pb/Sb heterostructures as topological superconductor candidates and advance the current understanding of topological coupling effects required for …

Tunable optical frequency combs offer a flexible solution for specific applications such as dual-comb spectroscopy, optical communications and microwave photonics, delivering improved precision, compatibility, and performance. However, previously, there has been a trade-off between reconfigurability and system simplicity in comb generation. Here, we present a fast-switched repetition rate frequency comb system that utilizes an electro-optic modulation time-lens technique with a high third-order nonlinear AlGaAsOI waveguide. Only one stage of modulator is used in the time-lens system which significantly reduces the complexity of the overall system. Our system allows for tuning of the center wavelength from 1542 nm to 1556 nm, as well as independent adjustment of the repetition rates from 18 GHz to 26.5 GHz, enabling fast-switching capabilities. Additionally, our system exhibits a high pump-to-comb …

Integrated silicon photonics has sparked a significant ramp-up of investment in both academia and industry as a scalable, power-efficient, and eco-friendly solution. At the heart of this platform is the light source, which in itself, has been the focus of research and development extensively. This paper sheds light and conveys our perspective on the current state-of-the-art in different aspects of application-driven on-chip silicon lasers. We tackle this from two perspectives: device-level and system-wide points of view. In the former, the different routes taken in integrating on-chip lasers are explored from different material systems to the chosen integration methodologies. Then, the discussion focus is shifted towards system-wide applications that show great prospects in incorporating photonic integrated circuits (PIC) with on-chip lasers and active devices, namely, optical communications and interconnects, optical phased …

Soliton mode locking in high-Q microcavities provides a way to integrate frequency comb systems. Among material platforms, AlGaAs has one of the largest optical nonlinearity coefficients, and is advantageous for low-pump-threshold comb generation. However, AlGaAs also has a very large thermo-optic effect that destabilizes soliton formation, and femtosecond soliton pulse generation has only been possible at cryogenic temperatures. Here, soliton generation in AlGaAs microresonators at room temperature is reported for the first time, to the best of our knowledge. The destabilizing thermo-optic effect is shown to instead provide stability in the high-repetition-rate soliton regime (corresponding to a large, normalized second-order dispersion parameter D_2/κ). Single soliton and soliton crystal generation with sub-milliwatt optical pump power are demonstrated. The generality of this approach is verified in a high-Q …